View CSD22206W_9040768.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. CSD22206W slps689 ? may 2017 CSD22206W ? 8-v p-channel nexfet ? power mosfet 1 1 features 1 ? ultra-low resistance ? small footprint 1.5 mm 1.5 mm ? lead free ? gate esd protection ? rohs compliant ? halogen free ? gate-source voltage clamp 2 applications ? load switch applications ? battery management ? battery protection 3 description this ? 8-v, 4.7-m , 1.5-mm 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. top view and circuit configuration product summary t a = 25 c typical value unit v ds drain-to-source voltage ? 8 v q g gate charge total ( ? 4.5 v) 11.2 nc q gd gate charge gate-to-drain 1.8 nc r ds(on) drain-to-source on resistance v gs = ? 2.5 v 6.8 m ? v gs = ? 4.5 v 4.7 v gs(th) threshold voltage ? 0.7 v device information device qty media package ship CSD22206W 3000 7-inch reel 1.50-mm 1.50-mm wafer bga package tape and reel CSD22206Wt 250 absolute maximum ratings t a = 25 c value unit v ds drain-to-source voltage ? 8 v v gs gate-to-source voltage ? 6 v i d continuous drain current (1) ? 5 a pulsed drain current (2) ? 108 a p d power dissipation 1.7 w t j , t stg operating junction, storage temperature ? 55 to 150 c (1) device operating at a temperature of 105 c. (2) typ r ja = 75 c/w ,mounted on fr4 material with maximum cu mounting area, pulse width 100 s, duty cycle 1%. r ds(on) vs v gs gate charge -v gs - gate-to-source voltage (v) r ds(on) - on-state resistance (m : ) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 d007 t c = 25c, i d = -2 a t c = 125c, i d = -2 a q g - gate charge (nc) -v gs - gate-to-source voltage (v) 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 d004 i d = -2 a v ds = -4 v g s s s s s d d d gate source drain productfolder ordernow technical documents support &community tools & software
2 CSD22206W slps689 ? may 2017 www.ti.com product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated table of contents 1 features .................................................................. 1 2 applications ........................................................... 1 3 description ............................................................. 1 4 revision history ..................................................... 2 5 specifications ......................................................... 3 5.1 electrical characteristics ........................................... 3 5.2 thermal information .................................................. 3 5.3 typical mosfet characteristics .............................. 4 6 device and documentation support .................... 7 6.1 receiving notification of documentation updates .... 7 6.2 community resources .............................................. 7 6.3 trademarks ............................................................... 7 6.4 electrostatic discharge caution ................................ 7 6.5 glossary .................................................................... 7 7 mechanical, packaging, and orderable information ............................................................. 8 7.1 CSD22206W package dimensions .......................... 8 7.2 recommended land pattern .................................... 9 4 revision history date revision notes may 2017 * initial release.
3 CSD22206W www.ti.com slps689 ? may 2017 product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated 5 specifications 5.1 electrical characteristics t a = 25 c (unless otherwise stated) parameter test conditions min typ max unit static characteristics bv dss drain-to-source voltage v gs = 0 v, i ds = ? 250 a ? 8 v bv gss gate-to-source voltage v ds = 0 v, i g = ? 250 a ? 6 v i dss drain-to-source leakage current v gs = 0 v, v ds = ? 6.4 v ? 1 a i gss gate-to-source leakage current v ds = 0 v, v gs = ? 6 v ? 100 na v gs(th) gate-to-source threshold voltage v ds = v gs , i ds = ? 250 a ? 0.4 ? 0.7 ? 1.05 v r ds(on) drain-to-source on resistance v gs = ? 2.5 v, i ds = ? 2 a 6.8 9.1 m ? v gs = ? 4.5 v, i ds = ? 2 a 4.7 5.7 g fs transconductance v ds = ? 0.8 v, i ds = ? 2 a 20 s dynamic characteristics c iss input capacitance v gs = 0 v, v ds = ? 4 v, ? = 1 mhz 1750 2275 pf c oss output capacitance 960 1250 pf c rss reverse transfer capacitance 340 440 pf r g series gate resistance 30 q g gate charge total ( ? 4.5 v) v ds = ? 4 v, i d = ? 2 a 11.2 14.6 nc q gd gate charge gate-to-drain 1.8 nc q gs gate charge gate-to-source 2.1 nc q g(th) gate charge at vth 1.3 nc q oss output charge v ds = ? 4 v, v gs = 0 v 7.2 nc t d(on) turnon delay time v ds = ? 4 v, v gs = ? 4.5 v, i ds = ? 2 a, r g = 0 37 ns t r rise time 17 ns t d(off) turnoff delay time 118 ns t f fall time 45 ns diode characteristics v sd diode forward voltage i ds = ? 2 a, v gs = 0 v ? 0.69 ? 1.0 q rr reverse recovery charge v ds = ? 4 v, i f = ? 1 a, di/dt = 200 a/ s 24 nc t rr reverse recovery time 59 ns (1) device mounted on fr4 material with 1-in 2 (6.45-cm 2 ), 2-oz (0.071-mm) thick cu. (2) device mounted on fr4 material with minimum cu mounting area. 5.2 thermal information t a = 25 c (unless otherwise stated) thermal metric typical values unit r ja junction-to-ambient thermal resistance (1) 75 c/w junction-to-ambient thermal resistance (2) 230
4 CSD22206W slps689 ? may 2017 www.ti.com product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated typ r ja = 75 c/w when mounted on 1 in 2 of 2-oz cu. typ r ja = 230 c/w when mounted on minimum pad area of 2-oz cu. 5.3 typical mosfet characteristics t a = 25 c (unless otherwise stated) figure 1. transient thermal impedance m0150-01 m0149-01
5 CSD22206W www.ti.com slps689 ? may 2017 product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated typical mosfet characteristics (continued) t a = 25 c (unless otherwise stated) figure 2. saturation characteristics v ds = ? 4 v figure 3. transfer characteristics i d = ? 2 a v ds = ? 4 v figure 4. gate charge figure 5. capacitance i d = ? 250 a figure 6. threshold voltage vs temperature figure 7. on-state resistance vs gate-to-source voltage t c - case temperature (c) -v gs(th) - threshold voltage (v) -75 -50 -25 0 25 50 75 100 125 150 175 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 d006 q g - gate charge (nc) -v gs - gate-to-source voltage (v) 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 d004 -v ds -drain-to-source voltage (v) c - capacitance (pf) 0 1 2 3 4 5 6 7 8 100 1000 10000 d005 c iss = c gd + c gs c oss = c ds + c gd c rss = c gd -v gs - gate-to-source voltage (v) -i ds - drain-to-source current (a) 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 35 40 45 50 d003 t c = 125c t c = 25c t c = -55c -v ds - drain-to-source voltage (v) -i ds - drain-to-source current (a) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 5 10 15 20 25 30 35 40 45 d002 v gs = -2.5 v v gs = -4.5 v -v gs - gate-to-source voltage (v) r ds(on) - on-state resistance (m : ) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 d007 t c = 25c, i d = -2 a t c = 125c, i d = -2 a
6 CSD22206W slps689 ? may 2017 www.ti.com product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated typical mosfet characteristics (continued) t a = 25 c (unless otherwise stated) i d = ? 2 a figure 8. normalized on-state resistance vs temperature figure 9. typical diode forward voltage single pulse, max r ja = 75 c/w figure 10. maximum safe operating area figure 11. maximum drain current vs temperature t a - ambient temperature ( c) -i ds - drain-to-source current (a) -50 -25 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 d011 -v ds - drain-to-source voltage (v) -i ds - drain-to-source current (a) 0.1 1 10 2020 0.1 1 10 100 200 d010 100 ms 10 ms 1 ms t a - ambient temperature ( q c) normalized on-state resistance -75 -50 -25 0 25 50 75 100 125 150 175 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 d008 v gs = -4.5 v -v sd - source-to-drain voltage (v) -i sd - source-to-drain current (a) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 d009 t c = -55 q c t c = -40 q c t c = 25 q c t c = 125 q c t c = 150 q c
7 CSD22206W www.ti.com slps689 ? may 2017 product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated 6 device and documentation support 6.1 receiving notification of documentation updates to receive notification of documentation updates, navigate to the device product folder on ti.com. in the upper right corner, click on alert me to register and receive a weekly digest of any product information that has changed. for change details, review the revision history included in any revised document. 6.2 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. design support ti's design support quickly find helpful e2e forums along with design support tools and contact information for technical support. 6.3 trademarks nexfet, e2e are trademarks of texas instruments. all other trademarks are the property of their respective owners. 6.4 electrostatic discharge caution these devices have limited built-in esd protection. the leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the mos gates. 6.5 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions.
8 CSD22206W slps689 ? may 2017 www.ti.com product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated 7 mechanical, packaging, and orderable information the following pages include mechanical, packaging, and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 CSD22206W package dimensions note: all dimensions are in mm (unless otherwise specified). table 1. pinout position designation a1 gate a2, a3, b1, b2, b3 source c1, c2, c3 drain m0171-01 side view 0.62 max pin 1 mark seating plate 0.50 0.50 1.00 0.04 0.62 max 0.35 0.10 solder ball 0.075 ? 0.31 1 1 3 3 bottom view top view front view a c a c 2 2 b b 1.50 +0.00 C0.08 1.50 +0.00 C0.08
9 CSD22206W www.ti.com slps689 ? may 2017 product folder links: CSD22206W submit documentation feedback copyright ? 2017, texas instruments incorporated 7.2 recommended land pattern note: all dimensions are in mm (unless otherwise specified). m0172-01 0.50 1 3 2 ? 0.25 0.50 1.00 b a c
package option addendum www.ti.com 22-may-2017 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples CSD22206W preview dsbga yzf 9 3000 tbd call ti call ti -55 to 150 22206 CSD22206Wt preview dsbga yzf 9 250 tbd call ti call ti -55 to 150 22206 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) rohs: ti defines "rohs" to mean semiconductor products that are compliant with the current eu rohs requirements for all 10 rohs substances, including the requirement that rohs substance do not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, "rohs" products are suitable for use in specified lead-free processes. ti may reference these types of products as "pb-free". rohs exempt: ti defines "rohs exempt" to mean products that contain lead but are compliant with eu rohs pursuant to a specific eu rohs exemption. green: ti defines "green" to mean the content of chlorine (cl) and bromine (br) based flame retardants meet js709b low halogen requirements of <=1000ppm threshold. antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
d: max = e: max = 1.49 mm, min = 1.49 mm, min = 1.43 mm1.43 mm
important notice texas instruments incorporated (ti) reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per jesd46, latest issue, and to discontinue any product or service per jesd48, latest issue. buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. ti ? s published terms of sale for semiconductor products ( http://www.ti.com/sc/docs/stdterms.htm ) apply to the sale of packaged integrated circuit products that ti has qualified and released to market. additional terms may apply to the use or sale of other types of ti products and services. reproduction of significant portions of ti information in ti data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. ti is not responsible or liable for such reproduced documentation. information of third parties may be subject to additional restrictions. resale of ti products or services with statements different from or beyond the parameters stated by ti for that product or service voids all express and any implied warranties for the associated ti product or service and is an unfair and deceptive business practice. ti is not responsible or liable for any such statements. buyers and others who are developing systems that incorporate ti products (collectively, ? designers ? ) understand and agree that designers remain responsible for using their independent analysis, evaluation and judgment in designing their applications and that designers have full and exclusive responsibility to assure the safety of designers ' applications and compliance of their applications (and of all ti products used in or for designers ? applications) with all applicable regulations, laws and other applicable requirements. designer represents that, with respect to their applications, designer has all the necessary expertise to create and implement safeguards that (1) anticipate dangerous consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm and take appropriate actions. designer agrees that prior to using or distributing any applications that include ti products, designer will thoroughly test such applications and the functionality of such ti products as used in such applications. ti ? s provision of technical, application or other design advice, quality characterization, reliability data or other services or information, including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, ? ti resources ? ) are intended to assist designers who are developing applications that incorporate ti products; by downloading, accessing or using ti resources in any way, designer (individually or, if designer is acting on behalf of a company, designer ? s company) agrees to use any particular ti resource solely for this purpose and subject to the terms of this notice. ti ? s provision of ti resources does not expand or otherwise alter ti ? s applicable published warranties or warranty disclaimers for ti products, and no additional obligations or liabilities arise from ti providing such ti resources. ti reserves the right to make corrections, enhancements, improvements and other changes to its ti resources. ti has not conducted any testing other than that specifically described in the published documentation for a particular ti resource. designer is authorized to use, copy and modify any individual ti resource only in connection with the development of applications that include the ti product(s) identified in such ti resource. no other license, express or implied, by estoppel or otherwise to any other ti intellectual property right, and no license to any technology or intellectual property right of ti or any third party is granted herein, including but not limited to any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which ti products or services are used. information regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or endorsement thereof. use of ti resources may require a license from a third party under the patents or other intellectual property of the third party, or a license from ti under the patents or other intellectual property of ti. ti resources are provided ? as is ? and with all faults. ti disclaims all other warranties or representations, express or implied, regarding resources or use thereof, including but not limited to accuracy or completeness, title, any epidemic failure warranty and any implied warranties of merchantability, fitness for a particular purpose, and non-infringement of any third party intellectual property rights. ti shall not be liable for and shall not defend or indemnify designer against any claim, including but not limited to any infringement claim that relates to or is based on any combination of products even if described in ti resources or otherwise. in no event shall ti be liable for any actual, direct, special, collateral, indirect, punitive, incidental, consequential or exemplary damages in connection with or arising out of ti resources or use thereof, and regardless of whether ti has been advised of the possibility of such damages. unless ti has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., iso/ts 16949 and iso 26262), ti is not responsible for any failure to meet such industry standard requirements. where ti specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards and requirements. using products in an application does not by itself establish any safety features in the application. designers must ensure compliance with safety-related requirements and standards applicable to their applications. designer may not use any ti products in life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use. life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). such equipment includes, without limitation, all medical devices identified by the u.s. food and drug administration as class iii devices and equivalent classifications outside the u.s. ti may expressly designate certain products as completing a particular qualification (e.g., q100, military grade, or enhanced product). designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications and that proper product selection is at designers ? own risk. designers are solely responsible for compliance with all legal and regulatory requirements in connection with such selection. designer will fully indemnify ti and its representatives against any damages, costs, losses, and/or liabilities arising out of designer ? s non- compliance with the terms and provisions of this notice. mailing address: texas instruments, post office box 655303, dallas, texas 75265 copyright ? 2017, texas instruments incorporated

▲Up To Search▲

Price & Availability of CSD22206W

	To Download CSD22206W Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .